Reduction of the resistivity of Ag/p-GaN contact by progressive breakdown of the interfacial contamination layer-Reference-Cited by-同舟云学术

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Reduction of the resistivity of Ag/p-GaN contact by progressive breakdown of the interfacial contamination layer

Published:2015-10-28 Issue:16 Volume:118 Page:165703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wang Li¹,Wu Feifei¹,Liu Shitao¹,Yang Qi¹,Zhao Yong²,Han Daofu²,Quan Zhijue³,Jiang Fengyi³

Affiliation:

1. School of Materials Science and Engineering, Nanchang University, Nanchang 330031, People's Republic of China

2. School of Science, Nanchang University, Nanchang 330031, People's Republic of China

3. National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, People's Republic of China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4934558

Reference26 articles.

1. High-power AlGaInN flip-chip light-emitting diodes

2. Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag

3. Low-resistance and highly-reflective Zn–Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes

4. Ohmic and degradation mechanisms of Ag contacts on p-type GaN

5. Mechanism for ohmic contact formation of Ni∕Ag contacts on p-type GaN

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System;Scientific Reports;2018-06-04

2. Effect of interfacial composition on Ag-based Ohmic contact of GaN-based vertical light emitting diodes;Journal of Applied Physics;2018-02-07

3. On Ni/Au Alloyed Contacts to Mg-Doped GaN;Journal of Electronic Materials;2017-09-08

4. Electrical switching of magnetization in a layer of α-Fe with a naturally hydroxidized surface;J. Mater. Chem. C;2016

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