Effect of interfacial composition on Ag-based Ohmic contact of GaN-based vertical light emitting diodes-Reference-Cited by-同舟云学术

Effect of interfacial composition on Ag-based Ohmic contact of GaN-based vertical light emitting diodes

Published:2018-02-07 Issue:5 Volume:123 Page:055301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wu Ning¹,Xiong Zhihua¹,Qin Zhenzhen¹²

Affiliation:

1. Key Laboratory for Optoelectronics and Communication of Jiangxi Province, Jiangxi Science and Technology Normal University, Nanchang 330018, People's Republic of China

2. College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, People's Republic of China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangxi Province

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5009695

Reference74 articles.

1. III-nitride blue microdisplays

2. High-power and reliable operation of vertical light-emitting diodes on bulk GaN

3. Design of high-efficiency GaN-based light emitting diodes with vertical injection geometry

4. Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact

5. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Working Mechanisms of Nanoscale Light-Emitting Diodes Operating in Non-Electrical Contact and Non-Carrier Injection Mode: Modeling and Simulation;Nanomaterials;2022-03-10

2. Selection of contact materials to p-type halide perovskite by electronegativity matching;AIP Advances;2020-06-01

3. Enhancement of lipid production and energy recovery from the green microalga Chlorella vulgaris by inoculum pretreatment with low-dose cold atmospheric pressure plasma (CAPP);Energy Conversion and Management;2020-01