Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials-Reference-Cited by-同舟云学术

Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials

Published:2017-03-07 Issue:9 Volume:121 Page:094102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Pazos S.¹²³^ORCID,Aguirre F.¹²³^ORCID,Miranda E.⁴,Lombardo S.⁵,Palumbo F.¹²³

Affiliation:

1. Consejo Nacional de Investigaciones Científicas y Técnicas, Godoy Cruz 2290 (C1425FQB), Buenos Aires, Argentina

2. GAIANN, Comisión Nacional de Energía Atómica, Gral. Paz 1499 (1650), San Martín, Provincia de Buenos Aires, Argentina

3. Departamento de Ingeniería Electrónica, Facultad Regional Buenos Aires, Universidad Tecnológica Nacional, Medrano 951 (C1179AAQ), Buenos Aires, Argentina

4. Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Bellaterra 08193, Spain

5. Istituto per la Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche (CNR), Zona Industriale, Ottava Strada, 5, 95121 Catania, Italy

Funder

Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET)

Ministerio de Ciencia, Tecnología e Innovación Productiva (MINCyT)

Universidad Tecnológica Nacional (UTN)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4977851

Reference37 articles.

1. Dielectric breakdown mechanisms in gate oxides