Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study-Reference-Cited by-同舟云学术

Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study

Published:2020-05-07 Issue:17 Volume:127 Page:174101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Pazos S. M.¹²^ORCID,Boyeras Baldomá S.¹²^ORCID,Aguirre F. L.¹²^ORCID,Krylov I.³,Eizenberg M.³,Palumbo F.¹²^ORCID

Affiliation:

1. Unidad de Investigación y Desarrollo de las Ingenierías (UIDI), Universidad Tecnológica Nacional, Facultad Regional Buenos Aires, Medrano 951 (C1179AAQ), Buenos Aires, Argentina

2. Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET), Godoy Cruz 2290 (C1425FQB), Buenos Aires, Argentina

3. Department of Materials Science and Engineering, Technion-Israel Institute of Technology, 32000 Haifa, Israel

Funder

Agencia Nacional de Promoción Científica y Tecnológica

Consejo Nacional de Investigaciones Científicas y Técnicas

Universidad Tecnológica Nacional

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5138922

Reference48 articles.

1. Alternative dielectrics to silicon dioxide for memory and logic devices

2. (Invited) Metal Gate/High-κ Dielectric Gate Stack Reliability; or How I Learned to Live with Trappy Oxides

3. A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐ k , and Layered Dielectrics

4. Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach

5. Nanometre-scale electronics with III–V compound semiconductors

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