Surface chemical bonding of (NH4)2Sx‐treated InP(001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108996
Reference21 articles.
1. Interface studies and electrical properties of plasma sulfide layers onn‐type InP
2. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
3. The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS Structures
4. The effect of phosphorous and sulfur treatment on the surface properties of InP
Cited by 44 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface-Tailored InP Nanowires via Self-Assembled Au Nanodots for Efficient and Stable Photoelectrochemical Hydrogen Evolution;Nano Letters;2021-08-16
2. Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress;Frontiers in Physics;2020-03-06
3. Interface and electrical properties of buried InGaAs channel MOSFET with an InP barrier layer and Al2O3/HfO2/Al2O3 gate dielectrics;Applied Physics Express;2019-12-06
4. Amorphous Gadolinium Aluminate as a Dielectric and Sulfur for Indium Phosphide Passivation;ACS Applied Electronic Materials;2019-10-25
5. Improving Electrical Properties by Effective Sulfur Passivation via Modifying the Surface State of Substrate in HfO2/InP Systems;The Journal of Physical Chemistry C;2018-03-20
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3