Interface and electrical properties of buried InGaAs channel MOSFET with an InP barrier layer and Al2O3/HfO2/Al2O3 gate dielectrics-Reference-Cited by-同舟云学术

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Interface and electrical properties of buried InGaAs channel MOSFET with an InP barrier layer and Al2O3/HfO2/Al2O3 gate dielectrics

Published:2019-12-06 Issue:1 Volume:13 Page:011004
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Li Yue,Chen Yonghe,Sun Tangyou,Zhang Fabi,Cao Mingmin,Li Qi,Fu Tao,Xiao Gongli,Liu Yingbo,Liu Honggang,Li Haiou^ORCID

Funder

National Nature Science Foundation of China

Guangxi Innovation Research Team Project

Natural Science Foundation of Guangxi Province

Guangxi Key Laboratory of Precision Navigation Technology and Application

Guangxi Science and Technology Project

GUET Excellent Graduate Thesis

Innovation Project of GUET Graduate Education

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.7567/1882-0786/ab5acf/pdf

Reference31 articles.

1. Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz

2. Mobility and Capacitance Comparison in Scaled InGaAs Versus Si Trigate MOSFETs

3. Gate delays of InGaAs/InP heterojunction integrated injection logic

4. High-k InGaAs metal-oxide-semiconductor field-effect-transistors with various barrier layer materials

5. Impact of Different Barrier Layers and Indium Content of the Channel on the Analog Performance of InGaAs MOSFETs

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO₂/Al₂O₃ and Al₂O₃/HfO₂/Al₂O₃ Gate Dielectric Stacks for High Total Doses;IEEE Transactions on Device and Materials Reliability;2023-03

2. High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec—Part I: Material and Device Characterization, DC Performance, and Simulation;IEEE Transactions on Electron Devices;2022-07

3. High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec—Part II: Dynamic Switching and RF Performance;IEEE Transactions on Electron Devices;2022-07

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