Improving Electrical Properties by Effective Sulfur Passivation via Modifying the Surface State of Substrate in HfO2/InP Systems-Reference-Cited by-同舟云学术

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Improving Electrical Properties by Effective Sulfur Passivation via Modifying the Surface State of Substrate in HfO2/InP Systems

Published:2018-03-20 Issue:13 Volume:122 Page:7226-7235
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Kang Hang-Kyu¹²,Kang Yu-Seon¹³,Baik Min¹,Jeong Kwang-Sik¹,Kim Dae-Kyoung¹,Song Jin-Dong²,Cho Mann-Ho¹^ORCID

Affiliation:

1. Department of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea

2. Center of Optoelectronic Materials, Korea Institute of Science and Technology, Seoul 136-791, Korea

3. Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Yongin 446-711, Korea

Funder

Samsung

Korea Research Institute of Standards and Science

Yonsei University

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.8b00524

Reference39 articles.

1. A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer

2. HfO2-based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer

3. In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP

4. Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

5. Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks

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2. Effect of Al2O3 insertion layer on ferroelectricity in HfO2/ZrO2 nanolaminates;T NONFERR METAL SOC;2023

3. Effect of Al2O3 insertion layer on ferroelectricity in HfO2/ZrO2 nanolaminates;Transactions of Nonferrous Metals Society of China;2023-10

4. Correlation of the Electronic and Atomic Structure at Passivated n-InP(100) Surfaces;Semiconductors;2023-05

5. Interface State Density Modification and Dielectric Reliability Enhancement of ErTi_xO_y/Al₂O₃/InP Laminated Stacks;IEEE Transactions on Electron Devices;2023-04

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