HfO2-based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer-Reference-Cited by-同舟云学术

HfO2-based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer

Published:2008-09-08 Issue:10 Volume:93 Page:102906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kim Hyoung-Sub,Ok I.,Zhang M.,Zhu F.,Park S.,Yum J.,Zhao H.,Lee Jack C.,Majhi Prashant

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2961119

Reference15 articles.

1. Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics

2. Channel mobility enhancement in InP metal‐insulator‐semiconductor field‐effect transistors

3. 65th Device Research Conference;Rajagopalan K.,2007

4. Role of Ga2O3 template thickness and gadolinium mole fraction in GdxGa0.4−xO0.6/Ga2O3 gate dielectric stacks on GaAs

5. Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling

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