Effects of fluorine plasma pre-treatment on electrical properties of high-κ-based InP metal-oxide-semiconductor device-Reference-Cited by-同舟云学术

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Effects of fluorine plasma pre-treatment on electrical properties of high-κ-based InP metal-oxide-semiconductor device

Published:2022-05 Issue: Volume:585 Page:152688
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Xu Qian,Liu Wei-Dong,Ding Yao-Xin,Zheng Zhi-Wei,Ying Lei-Ying,Zhang Bao-Ping

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference34 articles.

1. Surface passivation of III–V semiconductors for future CMOS devices—Past research, present status and key issues for future;Hasegawa;Appl. Surf. Sci.,2010

2. Effects of thermal and electrical stress on defect generation in InAs metal–oxide–semiconductor capacitor;Baik;Appl. Surf. Sci.,2019

3. High-quality interface in Al2O3/GaN/AlGaN/GaN MIS structures with in situ pre-gate plasma nitridation;Yang;IEEE Electron Device Lett.,2013

4. Electron mobility and free-carrier absorption in InP; determination of the compensation ratio;Walukiewicz;J. Appl. Phys.,1980

5. Asymmetric InGaAs/InP MOSFETs with source/drain engineering;Mo;IEEE Electron Device Lett.,2014

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on reliability improvement for p-type FeFinFET under negative-bias temperature instability stress with appropriate fluorine plasma treatment;Applied Physics Letters;2024-07-22

2. Top-Gated HfO₂-Capped InP Nanowire Photodetector With Low Noise and High Detectivity;IEEE Photonics Technology Letters;2024-05-15

3. Electrical Performance Determination and Stress Reliability Estimation of ALD- Derived Er₂O₃/InP Heterointerface;IEEE Transactions on Electron Devices;2023-12

4. Interface State Density Modification and Dielectric Reliability Enhancement of ErTi_xO_y/Al₂O₃/InP Laminated Stacks;IEEE Transactions on Electron Devices;2023-04

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