Determination of band offset in InP/YSZ hetero-junction by X-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

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Determination of band offset in InP/YSZ hetero-junction by X-ray photoelectron spectroscopy

Published:2018-01 Issue: Volume:147 Page:143-148
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Yao Jian Ke,Ye Fan,Wang Bo,Cai Xing-Min,Fan Ping

Funder

Natural Science Foundation of China

Science and Technology Plan of Shenzhen Municipal for Cooperation and Innovation

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference22 articles.

1. Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces

2. Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates

3. Nanometre-scale electronics with III–V compound semiconductors

4. High-K materials and metal gates for CMOS applications

5. Band offsets of high K gate oxides on III-V semiconductors

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