Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates

Published:2017-05-15 Issue:20 Volume:9 Page:17526-17535
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kang Hang-Kyu¹²,Kang Yu-Seon¹,Kim Dae-Kyoung¹,Baik Min¹,Song Jin-Dong²,An Youngseo³,Kim Hyoungsub³^ORCID,Cho Mann-Ho¹^ORCID

Affiliation:

1. Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea

2. Center of Opto-Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791, Korea

3. Department of Material Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea

Funder

Samsung

Korea Research Institute of Standards and Science

Yonsei University

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b00099

Reference35 articles.

1. A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer

2. HfO2-based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer

3. Defect States below the Conduction Band Edge of HfO2 Grown on InP by Atomic Layer Deposition

4. Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

5. Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical Performance Determination and Stress Reliability Estimation of ALD- Derived Er₂O₃/InP Heterointerface;IEEE Transactions on Electron Devices;2023-12

2. Effect of ultrafine microstructure on interdiffusion-driven phase transformations in Ni-Sn sandwich diffusion couples;Materials Today Communications;2023-06

3. Interface State Density Modification and Dielectric Reliability Enhancement of ErTi_xO_y/Al₂O₃/InP Laminated Stacks;IEEE Transactions on Electron Devices;2023-04

4. Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al₂O₃ Interlayers;ACS Applied Electronic Materials;2023-02-09

5. Fabrication of hydrophobic Pd/Al2O3-phosphoric acid via P O Al bond for liquid hydrogenation reaction;Chinese Journal of Chemical Engineering;2023-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3