Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3

Author:

Schmidt J.,Merkle A.,Brendel R.,Hoex B.,de Sanden M. C. M. van,Kessels W. M. M.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Characterization of 23-percent efficient silicon solar cells;Green;IEEE Transactions on Electronic Devices,1990

2. Aberle A, Warta W, Knobloch J, Voβ B. Surface passivation of high efficiency silicon solar cells. Proceedings of the 21st IEEE Photovoltaic Specialists Conference, 1990; 233-238.

3. 24.5% efficiency silicon PERT cells on MCZ substrates and 24.7% efficiency PERL cells on FZ substrates;Zhao;Progress in Photovoltaics,1999

4. Very low bulk and surface recombination in oxidized silicon wafers;Kerr;Semiconductor Science and Technology,2001

5. Stocks MJ, Cuevas A, Blakers AW. Minority carrier lifetimes of multicrystalline silicon during solar cell processing. Proceedings of the 14th European Photovoltaic Solar Energy Conference, Barcelona, Spain, 1997; 770-773.

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