Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al<sub>2</sub>O<sub>3</sub> Interlayers-Reference-Cited by-同舟云学术

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Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al₂O₃ Interlayers

Published:2023-02-09 Issue:2 Volume:5 Page:935-947
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Lu Jinyu¹,He Gang¹^ORCID,Wang Wenhao¹,Jiang Shanshan²,Wu Qiuju³,Fang Zebo³

Affiliation:

1. School of Physics and Materials Science, Radiation Detection Materials & Devices Laboratory, Anhui University, Hefei 230039, China

2. School of Integration Circuits, Anhui University, Hefei 230601, China

3. School of Mathematical Information, Shaoxing University, Shaoxing 312000, China

Funder

Shaoxing University

National Natural Science Foundation of China

Anhui Project

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01494

Reference59 articles.

1. Sb-based semiconductors for low power electronics

2. III-V Junctionless Gate-All-Around Nanowire MOSFETs for High Linearity Low Power Applications

3. Past, present and future of indium phosphide quantum dots

4. Mimicking Biological Synaptic Functionality with an Indium Phosphide Synaptic Device on Silicon for Scalable Neuromorphic Computing

5. Interface Properties of Atomic Layer Deposited TiO2/Al2O3 Films on In0.53Ga0.47As/InP Substrates

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1. Characterization of interface states and investigation of possible current conduction mechanisms in the Pt, Au, Cu/n-InP Schottky diodes;Physica Scripta;2024-08-21

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