Interface Properties of Atomic Layer Deposited TiO2/Al2O3 Films on In0.53Ga0.47As/InP Substrates-Reference-Cited by-同舟云学术

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Interface Properties of Atomic Layer Deposited TiO2/Al2O3 Films on In0.53Ga0.47As/InP Substrates

Published:2014-02-24 Issue:5 Volume:6 Page:3263-3274
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Mukherjee C.¹,Das T.¹,Mahata C.¹,Maiti C. K.¹,Chia C. K.²,Chiam S. Y.²,Chi D. Z.²,Dalapati G. K.²

Affiliation:

1. VLSI Engineering Lab, Department of Electronics and ECE, Indian Institute of Technology-Kharagpur, India 721302

2. Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am405019d

Reference63 articles.

1. New and unified model for Schottky barrier and III–V insulator interface states formation

2. Surface passivation technology for III–V semiconductor nanoelectronics

3. Impact of Buffer Layer on Atomic Layer Deposited TiAlO Alloy Dielectric Quality for Epitaxial-GaAs/Ge Device Application

4. Electrical and Interfacial Characterization of Atomic Layer Deposited High- $\kappa$ Gate Dielectrics on GaAs for Advanced CMOS Devices

5. HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition

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4. Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al₂O₃ Interlayers;ACS Applied Electronic Materials;2023-02-09

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