Surface passivation technology for III–V semiconductor nanoelectronics-Reference-Cited by-同舟云学术

Surface passivation technology for III–V semiconductor nanoelectronics

Published:2008-11 Issue:3 Volume:255 Page:628-632
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Hasegawa Hideki,Akazawa Masamichi

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference44 articles.

1. International Technology Roadmap for Semiconductors 2005 Edition, “Radio frequency and analog/mixed signal technologies for wireless communication”, http://www.itrs.net/Links/2005ITRS/Wireless2005.pdf.

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3. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications

4. Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers

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