In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4825218
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4. Effects of (NH4)2S passivation on the off-state performance of 3-dimensional InGaAs metal-oxide-semiconductor field-effect transistors
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1. Atomic layer deposition of Al2O3 and HfO2 for high power laser application;Journal of Alloys and Compounds;2021-04
2. Unusual oxidation-induced core-level shifts at the HfO2/InP interface;Scientific Reports;2019-02-06
3. Improving Electrical Properties by Effective Sulfur Passivation via Modifying the Surface State of Substrate in HfO2/InP Systems;The Journal of Physical Chemistry C;2018-03-20
4. Tuning electrical properties of Au/n-InP junctions by inserting atomic layer deposited Al 2 O 3 layer;Vacuum;2017-10
5. Effective Surface Passivation of InP Nanowires by Atomic-Layer-Deposited Al2O3 with POx Interlayer;Nano Letters;2017-09-11
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