A Self-Aligned InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated through a Lift-Off-Free Front-End Process
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/5/i=6/a=064002/pdf
Cited by 35 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Asymmetric Doping‐Dependent Electron Transport Mobility in InxGa1–xAs/GaAs Quantum Well Field‐Effect Transistor Structure;physica status solidi (b);2024-07-28
2. Occurrence of Nonlinear Electron Mobility in GaAs/InxGa1−xAs Coupled Double Quantum Well FET;Lecture Notes in Electrical Engineering;2023-09-03
3. Transport and quantum lifetimes of electrons in modulation doped Al0.3Ga0.7As/In0.15Ga0.85As double quantum well structure;Physics Letters A;2023-06
4. Intersubband effects on electron mobility in GaAs/ InxGa1-xAs Quantum well FET with asymmetric doping profiles;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07
5. Structural Asymmetry related Nonlinear Mobility of Electron in InxGa1-xAs/GaAs Quantum well FET;2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON);2022-11-26
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