Intersubband effects on electron mobility in GaAs/ In<sub>x</sub>Ga<sub>1-x</sub>As Quantum well FET with asymmetric doping profiles-Reference-Cited by-同舟云学术

Intersubband effects on electron mobility in GaAs/ In_xGa_1-xAs Quantum well FET with asymmetric doping profiles

Published:2023-04-07 Issue: Volume: Page:
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Container-title:2023 IEEE Devices for Integrated Circuit (DevIC)
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Author:

Panda Sangita R.¹,Pradhan Manoranjan¹,Sahu Trinath²,Panda Ajit Kumar³

Affiliation:

1. Veer Surendra Sai University of Technology,Department of ECE,Burla,Sambalpur,Odisha,India,768018

2. Berhampur University,COE in Nano Science and Technology for the development of Sensors,Berhampur,Odisha,India,760007

3. Electronics Center of Excellence Bhubaneswar,Bhubaneswar,India,751024

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10134754/10134560/10134919.pdf?arnumber=10134919

Reference37 articles.

1. High power density AlGaAs/InGaAs/GaAs PHEMTs using an optimized manufacturing process for Ka-band applications, Microelectron. Eng;cho,2014

2. Structural asymmetry induced size quantized nonmonotonous electron mobility in GaAs/AlxGa1_xAs double quantum well structure, Superlattices and Microstructures;nayak,2016

3. Design of Double Delta-Doped Al0.22Ga0.78As/In0.22Ga 0.78As Pseudomorphic HEMTs, Appl. Mech. Mater;wang,2007

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