Structural Asymmetry related Nonlinear Mobility of Electron in In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs Quantum well FET-Reference-Cited by-同舟云学术

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Structural Asymmetry related Nonlinear Mobility of Electron in In_xGa_1-xAs/GaAs Quantum well FET

Published:2022-11-26 Issue: Volume: Page:
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Container-title:2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)
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Author:

Panda Sangita R.¹,Pradhan Manoranjan¹,Sahu Trinath²,Panda Ajit Kumar³

Affiliation:

1. Veer Surendra Sai University of Technology,Department of ECE,Burla, Sambalpur,Odisha,India,768018

2. Berhampur University,Centre of Excellence in Nano Science and Technology for the Development of Sensors,Berhampur,Odisha,India,760007

3. Electronics Center of Excellence,Bhubaneswar,India,751024

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10032824/10032825/10032871.pdf?arnumber=10032871

Reference26 articles.

1. Strain-Balanced Criteria for Multiple Quantum Well Structures and Its Signature in X-ray Rocking Curves

2. Comparative assessment of III–V heterostructure and silicon underlap double gate MOSFETs

3. Intersubband-coupling and screening effects on the electron subband mobility in a GaAs∕InxGa1−xAs delta-doped double quantum well system

4. Asymmetric effects on the optical properties of double-quantum well systems

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