Advanced high-K gate dielectric for high-performance short-channel In<inf>0.7</inf>Ga<inf>0.3</inf>As quantum well field effect transistors on silicon substrate for low power logic applications-Reference-Cited by-同舟云学术

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Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

Published:2009-12 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE International Electron Devices Meeting (IEDM)
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Author:

Radosavljevic M.,Chu-Kung B.,Corcoran S.,Dewey G.,Hudait M. K.,Fastenau J. M.,Kavalieros J.,Liu W. K.,Lubyshev D.,Metz M.,Millard K.,Mukherjee N.,Rachmady W.,Shah U.,Chau Robert

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5419306/5424206/05424361.pdf?arnumber=5424361

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