Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks-Reference-Cited by-同舟云学术

Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks

Published:2013-07 Issue:1 Volume:1 Page:012104
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

He Gang,Deng Bin,Chen Hanshuang,Chen Xiaoshuang,Lv Jianguo,Ma Yongqing,Sun Zhaoqi

Funder

NNSFC

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4808243

Reference33 articles.

1. Effect of High-Pressure Inert Gas Annealing on AlON/Ge Gate Stacks

2. “Smart” silicon: Switching between p‐ and n‐conduction under compression

3. HfO2–GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer

4. Pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.7/Ga/sub 0.3/As HEMTs with an ultrahigh f/sub T/ of 562 GHz

5. Size-Dependent-Transport Study of $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion

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