“Smart” silicon: Switching between p‐ and n‐conduction under compression-Reference-Cited by-同舟云学术

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“Smart” silicon: Switching between p‐ and n‐conduction under compression

Published:2012-08-06 Issue:6 Volume:101 Page:062107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ovsyannikov Sergey V.,Korobeinikov Igor V.,Morozova Natalia V.,Misiuk Andrzej,Abrosimov Nikolai V.,Shchennikov Vladimir V.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4742345

Reference55 articles.

1. Annealing behavior of the oxygen donor in silicon

2. Formation of several kinds of oxygen‐related donors around 500 °C and effects of carbon in Czochralski silicon

3. Silicon on insulator material technology

4. Frontiers of silicon-on-insulator

5. Large positive magnetoresistive effect in silicon induced by the space-charge effect

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