Amorphous Gadolinium Aluminate as a Dielectric and Sulfur for Indium Phosphide Passivation-Reference-Cited by-同舟云学术

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Amorphous Gadolinium Aluminate as a Dielectric and Sulfur for Indium Phosphide Passivation

Published:2019-10-25 Issue:11 Volume:1 Page:2190-2201
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

van Dorp Dennis H.¹^ORCID,Nyns Laura¹,Cuypers Daniel¹,Ivanov Tsvetan¹,Brizzi Simone²,Tallarida Massimo³,Fleischmann Claudia¹,Hönicke Philipp⁴,Müller Matthias⁴,Richard Olivier¹,Schmeißer Dieter²,De Gendt Stefan¹,Lin Dennis H. C.¹,Adelmann Christoph¹^ORCID

Affiliation:

1. Imec, 3001 Leuven, Belgium

2. Angewandte Physik − Sensorik, Brandenburgische Technische Universität, 03046 Cottbus, Germany

3. ALBA Synchrotron, 08290 Cerdanyola del Vallès, Barcelona, Spain

4. Physikalisch-Technische Bundesanstalt, 10587 Berlin, Germany

Funder

European Commission

European Association of National Metrology Institutes

European Metrology Research Program

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00388

Reference80 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

3. A III–V nanowire channel on silicon for high-performance vertical transistors

4. Submicron scaling of HBTs

5. Passlack, M.; Droopad, R.; Rajagopalan, K.; Abrokwah, J.; Zurcher, P.; Fejes, P. High Mobility III-V Mosfet Technology. In Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE; IEEE: 2006; pp 39–42.

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1. Dipole modification of the surface electronic structure of III–V semiconductors;Solid State Communications;2024-06

2. Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides;ACS Applied Electronic Materials;2024-05-24

3. Correlation of the Electronic and Atomic Structure at Passivated n-InP(100) Surfaces;Semiconductors;2023-05

4. Abnormal electronic structure of chemically modified n-InP(100) surfaces;Journal of Materials Chemistry C;2022

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