Dipole modification of the surface electronic structure of III–V semiconductors-Reference-Cited by-同舟云学术

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Dipole modification of the surface electronic structure of III–V semiconductors

Published:2024-06 Issue: Volume:384 Page:115484
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Lebedev Mikhail V.^ORCID,Savchenko Grigory M.^ORCID,Averkiev Nikita S.^ORCID

Funder

Ioffe Institute

Publisher

Elsevier BV

Reference33 articles.

1. Chemical studies of the passivation of GaAs surface recombination using sulfides and thiols;Lunt;J. Appl. Phys.,1991

2. Fourier-transform infrared and photoluminescence spectroscopies of self-assembled monolayers of long-chain thiols on (001) GaAs;Ding;J. Appl. Phys.,2006

3. Surface conductivity of InAs/GaSb superlattice infrared detectors treated with thiolated self assembled monolayers;Henry;Appl. Phys. Lett.,2016

4. Adsorption of phenylphosphonic acid on GaAs(100) surfaces;Botelho do Rego;Langmuir,2005

5. Phosphonic acid modification of GaInP2 photocathodes toward unbiased photoelectrochemical water splitting;MacLeod;ACS Appl. Mater. Interfaces,2015

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