Adsorption of Phenylphosphonic Acid on GaAs (100) Surfaces-Reference-Cited by-同舟云学术

Adsorption of Phenylphosphonic Acid on GaAs (100) Surfaces

Published:2005-08-10 Issue:19 Volume:21 Page:8765-8773
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Botelho do Rego A. M.¹,Ferraria A. M.¹,El Beghdadi J.¹,Debontridder F.¹,Brogueira P.¹,Naaman R.¹,Rei Vilar M.¹

Affiliation:

1. Centro de Química Física Molecular and ICEMS, Departamento de Física, Instituto Superior Técnico, P-1049-001 Lisboa, Portugal, ITODYS (CNRS - Université Denis Diderot), F-75005 Paris, France, and Chemical Physics Department, Weizmann Institute of Science, Rehovot, Israel 76100

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/la050682%2B

Reference31 articles.

1. Surface Chemistry of Prototypical Bulk II−VI and III−V Semiconductors and Implications for Chemical Sensing

2. Progress in Gallium Arsenide Semiconductors

3. Molecular Engineering of Semiconductor Surfaces and Devices

4. Chemisorption reactions of diisopropyl methyl phosphonate with various metal salts and the effect of complex-formation on the PO stretching frequency

5. Environmental chemistry of phosphonates

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