A III–V nanowire channel on silicon for high-performance vertical transistors
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/nature11293.pdf
Reference29 articles.
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4. Ionescu, A. M. & Riel, H. Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479, 329–337 (2011)
5. Radosavljevic, M. et al. Advanced high-k gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications. IEDM Tech. Dig. 319–322 (2009)
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