Spatial dependence of dopant incorporation and electrical transport in Si-doped GaAs(Sb) nanowires-Reference-Cited by-同舟云学术

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Spatial dependence of dopant incorporation and electrical transport in Si-doped GaAs(Sb) nanowires

Published:2024-07-15 Issue:7 Volume:8 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Schreitmüller T.¹^ORCID,Kumar Saluja D.¹,Mead C. E.²^ORCID,Ramsteiner M.³⁴^ORCID,Jeong H. W.¹^ORCID,Esmaielpour H.¹^ORCID,Huang C.²,Ruhstorfer D.¹,Finley J. J.¹,Lauhon L. J.²^ORCID,Koblmüller G.¹^ORCID

Affiliation:

1. Technical University of Munich

2. Northwestern University

3. Paul-Drude-Institut für Festkörperelektronik

4. Forschungsverbund Berlin

Funder

European Research Council

Deutsche Forschungsgemeinschaft

H2020 Marie Skłodowska-Curie Actions

National Science Foundation

Northwestern University

Nuance Foundation

W. M. Keck Foundation

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.8.076002/fulltext

Reference67 articles.

1. Engineering III–V Semiconductor Nanowires for Device Applications

2. A III–V nanowire channel on silicon for high-performance vertical transistors

3. Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

4. Quantum‐Confinement‐Enhanced Thermoelectric Properties in Modulation‐Doped GaAs–AlGaAs Core–Shell Nanowires

5. GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si

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