Selective Area HVPE of InGaAs Nanowires with Widely Tunable Composition on Si Substrates for Nanoscale Device Integration on Si Platforms-Reference-Cited by-同舟云学术

Selective Area HVPE of InGaAs Nanowires with Widely Tunable Composition on Si Substrates for Nanoscale Device Integration on Si Platforms

Published:2024-07-29 Issue:15 Volume:7 Page:17417-17423
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Chereau Emmanuel¹^ORCID,Dubrovskii Vladimir G.²^ORCID,Diak Ethan³,Semlali Elias¹^ORCID,Avit Geoffrey¹^ORCID,Trassoudaine Agnès¹,Gil Evelyne¹,LaPierre Ray³^ORCID,André Yamina¹

Affiliation:

1. Université Clermont Auvergne, CNRS, Clermont Auvergne INP, Institut Pascal, F-63000 Clermont-Ferrand, France

2. Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia

3. Department of Engineering Physics, McMaster University, Hamilton L8S4L7, Ontario, Canada

Funder

Agence Nationale de la Recherche

European Commission

Saint Petersburg State University

Natural Sciences and Engineering Research Council of Canada

H2020 European Research Council

R?gion Auvergne-Rh?ne-Alpes

Region Auvergne

French government IDEX-SITE

International Research Center "Innovation Transportation and Production Systems" of the I-SITE

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.4c02466

Reference41 articles.

1. Semiconductor nanowires: to grow or not to grow?

2. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

3. Monolithic InGaAs Nanowire Array Lasers on Silicon-on-Insulator Operating at Room Temperature

4. A III–V nanowire channel on silicon for high-performance vertical transistors

5. Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length