Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)-Reference-Cited by-同舟云学术

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

Published:2017-01 Issue:1 Volume:35 Page:010801
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Yerino Christopher D.¹,Liang Baolai²,Huffaker Diana L.²,Simmonds Paul J.³,Lee Minjoo Larry⁴

Affiliation:

1. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520

2. California NanoSystems Institute and Department of Electrical Engineering, University of California, Los Angeles, California 90095

3. Department of Physics and Micron School of Materials Science and Engineering, Boise State University, Boise, Idaho 83725

4. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801

Funder

University of California Lab Fees Program

National Science Foundation (NSF)

U.S. Department of Energy (DOE)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4972049

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