The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS Structures-Reference-Cited by-同舟云学术

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The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS Structures

Published:1988-07-20 Issue:Part 2, No. 7 Volume:27 Page:L1331-L1333
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fan Jia-Fa,Oigawa Haruhiro,Nannichi Yasuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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