Investigation of IrO2 and RuO2 Schottky contacts on AlGaN/GaN heterostructure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1627454
Reference25 articles.
1. High performance 0.25 μm gate-length AlGaN∕GaN HEMTs on sapphire with transconductance of over 400 mS∕mm
2. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
3. Recessed 0.25 [micro sign]m gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE
4. A study on barrier height of AuAlxGa1 − xN Schottky diodes in the range 0 ≤ x ≤ 0.20
5. Reliability of Schottky Contacts on AlGaN
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