Annealing Pressure and Ambient Dependent RuOxSchottky Contacts on InAlN/AlN/GaN-on-Si(111) Heterostructure
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Enhancement-Mode InAlN/AlN/GaN HEMTs With $ \hbox{10}^{-12}\ \hbox{A/mm}$ Leakage Current and $ \hbox{10}^{12}$ on/off Current Ratio
2. Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors
3. Al2O3 passivated InAlN/GaN HEMTs on SiC substrate with record current density and transconductance
4. Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?
5. CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon
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