Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?

Published:2006-12 Issue: Volume: Page:
ISSN:
Container-title:2006 International Electron Devices Meeting
language:
Short-container-title:

Author:

Medjdoub F.,Carlin J.-F.,Gonschorek M.,Feltin E.,Py M.A.,Ducatteau D.,Gaquiere C.,Grandjean N.,Kohn E.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4154162/4139311/04154370.pdf?arnumber=4154370

Cited by 49 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation-based optimization of barrier and spacer layers in InAlN/GaN HEMTs for improved 2DEG density;Micro and Nanostructures;2024-11

2. RF Performance Augmentation Using DG-InAlN/GaN HEMT;IEEE Transactions on Electron Devices;2024-09

3. Impact of AlN Buffer Layer Thickness on Electronic and Electrical Characteristics of In0.17Al0.83N/GaN High-Electron-Mobility Transistor;Physics of the Solid State;2024-06

4. Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length;IEEE Transactions on Electron Devices;2024-03

5. Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination;physica status solidi (a);2024-01-15

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP