Recessed 0.25 [micro sign]m gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20010999?crawler=true&mimetype=application/pdf
Reference7 articles.
1. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
2. High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE
3. Recessed gate GaN MODFETs
4. AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise
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2. Advances in DC/RF Performance of AlGaN/GaN MIS-HEMT by Incorporating Dual Metal Gate Architecture;IETE Technical Review;2020-11-17
3. Effect of pinch-off current leakage characteristics on microwave power performances of AlxGa1−xN/GaN HEMTs;Solid-State Electronics;2013-02
4. Carrier transport mechanism of strained AlGaN/GaN Schottky contacts;Current Applied Physics;2012-07
5. X-band AlGaN/GaN HEMTs with high microwave power performance;Science China Physics, Mechanics and Astronomy;2011-01-22
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