On the electrical stress-induced oxide-trapped charges in thin HfO2∕SiO2 gate dielectric stack
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2783967
Reference14 articles.
1. Charge trapping in ultrathin hafnium oxide
2. Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
3. Constant voltage stress induced degradation in HfO[sub 2]/SiO[sub 2] gate dielectric stacks
4. Role of hydrogen on negative bias temperature instability in HfO2-based hole channel field-effect transistors
5. The characteristics of hole trapping in HfO2∕SiO2 gate dielectrics with TiN gate electrode
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigations on electrical characteristics and reliability properties of MOS capacitors using HfAlOx on n-GaAs substrates;Microelectronics Reliability;2012-01
2. Comparison of electrical stress-induced charge carrier generation/trapping and related degradation of SiO2 and HfO2/SiO2 gate dielectric stacks;Microelectronics Reliability;2010-12
3. Charge trapping and current-conduction mechanisms of metal–oxide–semiconductor capacitors with LaxTay dual-doped HfON dielectrics;Solid-State Electronics;2010-10
4. Mechanism of positive charge generation in the bulk of HfAlO/SiO2 stack;Microelectronic Engineering;2009-07
5. Electrical stress-induced charge carrier generation/trapping related degradation of HfAlO/SiO2 and HfO2/SiO2 gate dielectric stacks;Journal of Applied Physics;2009-06-15
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