Electrical stress-induced charge carrier generation/trapping related degradation of HfAlO/SiO2 and HfO2/SiO2 gate dielectric stacks
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3148297
Reference31 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Constant voltage stress induced degradation in HfO[sub 2]/SiO[sub 2] gate dielectric stacks
3. Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics
4. Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process
5. MOS characteristics of ultrathin CVD HfAlO gate dielectrics
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