Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process-Reference-Cited by-同舟云学术

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Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

Published:2003-10 Issue:10 Volume:50 Page:2088-2094
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Moon Sig Joo ,Byung Jin Cho ,Chia Ching Yeo ,Daniel Siu Hung Chan ,Sung Jin Whoang ,Mathew S.,Bera L.K.,Balasubramanian N.,Dim-Lee Kwong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/27630/01232928.pdf?arnumber=1232928

Cited by 56 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Improved electrical performance of multilayer MoS2 transistor by incorporating Al into host HfO2 as gate dielectric;Applied Physics Express;2019-05-20

3. Study on the dielectric properties of Al2O3/TiO2sub-nanometric laminates: effect of the bottom electrode and the total thickness;Journal of Physics D: Applied Physics;2018-01-19

4. Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters;RSC Advances;2018

5. Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature;Journal of Alloys and Compounds;2017-01

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