Improved electrical performance of multilayer MoS2 transistor by incorporating Al into host HfO2 as gate dielectric
Author:
Funder
National Natural Science Foundation of China
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/ab1fa7/pdf
Reference39 articles.
1. Electric Field Effect in Atomically Thin Carbon Films
2. Superior Thermal Conductivity of Single-Layer Graphene
3. Resistive switching memories in MoS2 nanosphere assemblies
4. Integrated Circuits Based on Bilayer MoS2 Transistors
5. Phonon-limited mobility inn-type single-layer MoS2from first principles
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3. Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric;IEEE Electron Device Letters;2020-03
4. Optimizing Al-doped ZrO2 as the gate dielectric for MoS2 field-effect transistors;Nanotechnology;2020-01-14
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