The characteristics of hole trapping in HfO2∕SiO2 gate dielectrics with TiN gate electrode
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1808228
Reference10 articles.
1. Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
2. M. Krishnan and V. Kol’dyaev, IEEE Reliability Physics Symposium Proceedings, 2002.
3. Charge trapping in ultrathin hafnium oxide
4. Charge detrapping in HfO2 high-κ gate dielectric stacks
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