Role of hydrogen on negative bias temperature instability in HfO2-based hole channel field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1784549
Reference18 articles.
1. Bias temperature instability in scaled p/sup +/ polysilicon gate p-MOSFET's
2. Effect of nitrogen at SiO2/Si interface on reliability issues—negative-bias-temperature instability and Fowler–Nordheim-stress degradation
3. Nitrogen-enhanced negative bias temperature instability: An insight by experiment and first-principle calculations
4. High-κ gate dielectrics: Current status and materials properties considerations
5. Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs
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