PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases-Reference-Cited by-同舟云学术

PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases

Published:2019-07-24 Issue:31 Volume:11 Page:28407-28422
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zanders David^ORCID,Ciftyurek Engin¹,Subaşı Ersoy,Huster Niklas,Bock Claudia^ORCID,Kostka Aleksander,Rogalla Detlef,Schierbaum Klaus¹,Devi Anjana^ORCID

Affiliation:

1. Department of Materials Science, Institute of Experimental Physics and Condensed Matter, Heinrich-Heine-University Düsseldorf, 40225 Düsseldorf, Germany

Funder

European Regional Development Fund

Deutsche Forschungsgemeinschaft

European Cooperation in Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b07090

Reference68 articles.

1. Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”