Nitrogen-concentration modulated interfacial and electrical properties of sputtering-derived HfGdON gate dielectric
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4953144
Reference33 articles.
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4. Interaction of Gd and N incorporation on the band structure and oxygen vacancies of HfO2 gate dielectric films
5. Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon
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