Interaction of Gd and N incorporation on the band structure and oxygen vacancies of HfO2 gate dielectric films-Reference-Cited by-同舟云学术

Interaction of Gd and N incorporation on the band structure and oxygen vacancies of HfO2 gate dielectric films

Published:2014-07-07 Issue:8 Volume:251 Page:1635-1638
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Xiong Yuhua¹,Tu Hailing¹,Du Jun¹,Wang Ligen²,Wei Feng¹,Chen Xiaoqiang¹,Yang Mengmeng¹,Zhao Hongbin¹,Chen Dapeng³,Wang Wenwu³

Affiliation:

1. Advanced Electronic Materials Institute; General Research Institute for Nonferrous Metals; Beijing 100088 P.R. China

2. Center for Computing and Simulation of Advanced Materials and State Key Laboratory of Nonferrous Metals and Processes; General Research Institute for Nonferrous Metals; Beijing 100088 P.R. China

3. Key Laboratory of Microelectronics Devices and Integrated Technology; Institute of Microelectronics; Chinese Academy of Sciences; Beijing 100029 P.R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201451303/fullpdf

Reference31 articles.

1. Band structure and electrical properties of Gd-doped HfO2 high k gate dielectric

2. Oxygen vacancy estimation of high k metal gate using thermal dynamic model

3. A higher-k tetragonal HfO2 formed by chlorine plasma treatment at interfacial layer for metal-oxide-semiconductor devices