Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3656001
Reference19 articles.
1. Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer
2. Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors
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