Analysis of Nanometer-Scale n-Type Double-Gate (DG) MOSFETs Using High-ƙ Dielectrics for High-Speed Applications-Reference-Cited by-同舟云学术

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Analysis of Nanometer-Scale n-Type Double-Gate (DG) MOSFETs Using High-ƙ Dielectrics for High-Speed Applications

Published:2021-05-05 Issue: Volume: Page:
ISSN:
Container-title:2021 44th International Spring Seminar on Electronics Technology (ISSE)
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Author:

Gowthaman Naveenbalaji,Srivastava Viranjay M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9467488/9467508/09467619.pdf?arnumber=9467619

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigations on Cylindrical Surrounding Double-gate (CSDG) Mosfet using AL_XGA_1-XAS/INP: PT with LA₂O₃Oxide Layer for Fabrication;Recent Patents on Nanotechnology;2024-06

2. Germanium- and Silicon-Nanotransistor Designs by Electrical and Thermal Self-Consistent Analysis;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2023-10

3. A Method of Big Data Collection and Normalization for Electronic Engineering Applications;Data Analysis and Related Applications 1;2022-08-24

4. A Generalized Analytical Approach to Model the Gate Tunneling Current in Nanoscale Double Gate MOSFETs;Silicon;2022-06-01

5. Impact of High-K Gate Stack on Subthreshold Performance of Double-Gate (DG) MOSFETs;Silicon;2022-04-14

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