Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=3/a=034101/pdf
Reference24 articles.
1. A Monte Carlo study of the low resistance state retention of HfOx based resistive switching memory
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3. Opportunity of Spinel Ferrite Materials in Nonvolatile Memory Device Applications Based on Their Resistive Switching Performances
4. $\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current
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