Nitrogen doping and thermal stability in HfSiOxNy studied by photoemission and x-ray absorption spectroscopy-Reference-Cited by-同舟云学术

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Nitrogen doping and thermal stability in HfSiOxNy studied by photoemission and x-ray absorption spectroscopy

Published:2005-10-31 Issue:18 Volume:87 Page:182908
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Toyoda Satoshi,Okabayashi Jun,Takahashi Haruhiko,Oshima Masaharu,Lee Dong-Ick,Sun Shiyu,Sun Steven,Pianetta Piero A.,Ando Takashi,Fukuda Seiichi

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2126112

Reference19 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. Crystallization kinetics and microstructure-dependent leakage current behavior of ultrathin HfO2 dielectrics: In situ annealing studies

3. Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition

4. Application of HfSiON as a gate dielectric material

5. Nitrogen-enhanced negative bias temperature instability: An insight by experiment and first-principle calculations

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1. Analysis of electrical, dielectric and thermal performance of NiFe/SiO2/Si MOS device fabricated by liquid phase epitaxy;Materials Science in Semiconductor Processing;2019-12

2. Nitrogen-concentration modulated interfacial and electrical properties of sputtering-derived HfGdON gate dielectric;Journal of Applied Physics;2016-06-07

3. Backside versus frontside advanced chemical analysis of high-k/metal gate stacks;Journal of Electron Spectroscopy and Related Phenomena;2015-08

4. Diffusion-induced structural changes in La/B-based multilayers for 6.7-nm radiation;Journal of Micro/Nanolithography, MEMS, and MOEMS;2014-03-17

5. Electrical, optical and micro-structural properties of ultra-thin HfTiON films;Applied Surface Science;2014-03

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