Analysis of electrical, dielectric and thermal performance of NiFe/SiO2/Si MOS device fabricated by liquid phase epitaxy-Reference-Cited by-同舟云学术

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Analysis of electrical, dielectric and thermal performance of NiFe/SiO2/Si MOS device fabricated by liquid phase epitaxy

Published:2019-12 Issue: Volume:104 Page:104652
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Ashery Adel,Khabiri Gomaa,Hassan Abdelwahab,Yousef Moataz M.K.,Khalil Ahmed S.G.

Funder

STDF

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference81 articles.

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2. Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering;Fiorenza;Mater. Sci. Semicond. Process.,2019

3. Characteristics of Al 2 O 3/native Oxide/n-GaN Capacitors by Post-metallization Annealing;Yuge,2019

4. Comparative study of boron doped gate oxide impact on 4H and 6H-SiC n-MOSFETs;Cabello;Mater. Sci. Semicond. Process.,2019

5. SiC power MOSFET in short-circuit operation: electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation;Boige;Math. Comput. Simulat.,2019

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1. Temperature-dependent dielectric properties of p-n heterojunction diodes based on hydrothermally synthesized ZnO nanostructures;Physica Scripta;2023-09-20

2. Dielectric, Conductivity and Modulus Properties of Au/ZnO/p-InP (MOS) Capacitor;ECS Journal of Solid State Science and Technology;2023-03-01

3. Tuned High Dielectric Constant, Low Dielectric Loss Tangent of Novel Structure Au/PPy-MWCNTs/TiO₂/Al₂O₃/p-Si/Al;ECS Journal of Solid State Science and Technology;2022-12-01

4. The novel behavior of real and imaginary part of impedance, modulus, and AC conductivity of Au/PPy–MWCNTs/TiO2/Al2O3/n-Si/Al;Journal of Materials Science: Materials in Electronics;2022-04-11

5. Fabrication of low interface dipole layer on Al2O3/SiO2/Si structure by densification of interfacial layer;Journal of Alloys and Compounds;2022-03

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