SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation-Reference-Cited by-同舟云学术

SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation

Published:2019-04 Issue: Volume:158 Page:375-386
ISSN:0378-4754
Container-title:Mathematics and Computers in Simulation
language:en
Short-container-title:Mathematics and Computers in Simulation

Author:

Boige F.,Richardeau F.,Lefebvre S.,Cousineau M.

Funder

Agence Nationale de la Recherche

Publisher

Elsevier BV

Subject

Applied Mathematics,Modelling and Simulation,Numerical Analysis,General Computer Science,Theoretical Computer Science

Reference19 articles.

1. Modern Power Devices;Baliga,1987

2. Silicon Carbide Power Devices;Baliga,2005

3. Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation;Boige;Microelectron. Reliab.,2017

4. H.S. Carslaw, J.C. Jaeger, Conduction of Heat in Solids. Oxford Science.

5. A. Castellazzi, A. Fayyaz, L. Yang, M. Riccio, A. Irace, Short-circuit robustness of SiC Power MOSFETs: Experimental analysis, in: 2014 IEEE 26th International Symposium on Power Semiconductor Devices IC’s, ISPSD, 2014, pp. 71–74.

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs;Solid State Phenomena;2024-08-23

2. Extension of the Stray Voltage Capture Short-Circuit Detection Method to a 6-Phase Fault-Tolerant Dual-Motor Drive;IEEE Open Journal of Power Electronics;2024

3. Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events;IEEE Transactions on Device and Materials Reliability;2023-12

4. Electro-thermo-mechanical modelling of a SiC MOSFET transistor under non-destructive short-circuit;Microelectronics Reliability;2023-11

5. Multi-scale electro-thermo-mechanical simulation of a SiC MOSFET transitor during short-circuit;2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2023-04-17