Carrier concentration dependent photoluminescence properties of Si-doped InAs nanowires
Author:
Affiliation:
1. Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials, Technische Universität München, Garching 85748, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5019350
Reference37 articles.
1. Growth and properties of InGaAs nanowires on silicon
2. Direct Heteroepitaxy of Vertical InAs Nanowires on Si Substrates for Broad Band Photovoltaics and Photodetection
3. Photocurrents in a Single InAs Nanowire/Silicon Heterojunction
4. Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon
5. Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire
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